GaAsSb quantum-well for 1.3-/spl mu/m VCSEL application

Author

Nishi, K. ; Anan, T. ; Sugou, S.

Author_Institution

Opt. Interconnection, NEC Lab., Ibaraki, Japan

fYear

1999

fDate

26-27 July 1999

Abstract

Lasing at a wavelength of longer than 1.2 /spl mu/m in a GaAsSb VCSEL is achieved at room temperature. A strain-compensation structure will enable the increase of the number of QWs for suppressing the gain saturation and the Sb content to about 0.37 for longer-wavelength emission. By using this technology, 1.3 /spl mu/m range long-wavelength VCSELs with this material system can be developed in the near future.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; infrared sources; laser transitions; optical saturation; quantum well lasers; surface emitting lasers; 1.2 mum; 1.3 mum; 1.3-/spl mu/m VCSEL application; GaAsSb; GaAsSb quantum-well VCSEL laser; gain saturation suppression; long-wavelength VCSELs; longer-wavelength emission; material system; room temperature; strain-compensation structure; Capacitive sensors; Conducting materials; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Photonic band gap; Quantum wells; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-5633-0

Type

conf

DOI

10.1109/LEOSST.1999.794704

Filename

794704