Title :
Improved FET noise model extraction method for statistical model development
Author :
Pritchett, S. ; Fernandez, Alicia ; Bridges, D. ; Whelan, K.
Author_Institution :
Texas Instrum. Inc., TX, USA
Abstract :
An analytic method is presented for extracting gate-source leakage resistance, R/sub gs/, from S-parameter measurements /spl ges/500 MHz. Subsequent noise source parameter extraction is frequency independent. Consequently, model parameter optimization is eliminated and physical correlations between parameters preserved. Compact statistical noise models can then be developed using the Principal Component method. R/sub gs/ also improves modeled low-frequency stability characteristics.<>
Keywords :
S-parameters; equivalent circuits; field effect transistors; semiconductor device noise; stability; statistical analysis; FET noise model extraction method; S-parameter measurements; gate-source leakage resistance; low-frequency stability characteristics; noise source parameter extraction; principal component method; statistical model development; Electrical resistance measurement; FETs; Frequency; Independent component analysis; Low-frequency noise; Noise figure; Noise measurement; Optimization methods; Scattering parameters; Stability;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405893
