DocumentCode
3182652
Title
Self-assembled quantum-dot lasers and semiconductor optical amplifiers
Author
Sugawara, M. ; Hatori, N. ; Akiyama, T. ; Nakata, Y.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2001
fDate
2001
Firstpage
471
Lastpage
472
Abstract
Through the research of quantum dot lasers, we have obtained significant knowledge on carrier dynamics and optical gain of quantum dots like homogeneous broadening of single-dot optical gain and its effect on lasing spectra, the magnitude of gain as a function of current, ultrafast gain recovery, and a comprehensive theory. Based on the knowledge, we developed an operation theory of traveling-type quantum-dot semiconductor optical amplifiers (SOAs) to demonstrate that they can process high-bit-rate multiple-wavelength optical signals over 40 Gbit/s under gain saturation. This promises diverse optical functional devices, which meet with the demand of the next-generation broadband all-optical photonic networks
Keywords
quantum well lasers; self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; carrier dynamics; diverse optical functional devices; gain saturation; high-bit-rate multiple-wavelength optical signals; homogeneous broadening; lasing spectra; next-generation broadband all-optical photonic networks; optical gain; self-assembled quantum-dot lasers; semiconductor optical amplifiers; traveling-type quantum-dot semiconductor optical amplifiers; ultrafast gain recovery; Laser theory; Optical devices; Optical saturation; Quantum dot lasers; Quantum dots; Quantum mechanics; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929178
Filename
929178
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