Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

Author

Kakitsuka, Takaaki ; Shibata, Yasuo ; Itoh, Masayuki ; Tohmori, Yuichi ; Yoshikuni, Yuzo

Author_Institution

NTT Photonics Lab., Kanagawa, Japan

fYear

2001

fDate

2001

Firstpage

485

Lastpage

488

Abstract

Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain

Keywords

III-V semiconductors; gallium arsenide; indium compounds; k.p calculations; light polarisation; semiconductor optical amplifiers; 1.55 mum; InGaAsP; InP-buried structure; k·p method; polarization dependence; polarization sensitivity; strain relaxation; strained bulk semiconductor optical amplifiers; tensile-strained bulk InGaAsP; Capacitive sensors; Epitaxial growth; Laboratories; Numerical analysis; Optical polarization; Optical switches; Photonics; Semiconductor optical amplifiers; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929183

Filename

929183