High performance wafer-bonded bottom-emitting 850 nm VCSELs on transparent substrates

Author

Chao-Kun Lin ; Dapkus, P.D.

Author_Institution

Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

fYear

1999

fDate

26-27 July 1999

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) are of great interest in this application because of their low cost fabrication, 2D integrable geometry, ultralow threshold current, and tight circular beam shape. We demonstrate high efficiency 850 nm bottom-emitting VCSELs on transparent undoped GaP and sapphire substrates.

Keywords

laser beams; laser transitions; optical fabrication; semiconductor lasers; substrates; surface emitting lasers; transparency; wafer bonding; 2D integrable geometry; 850 nm; VCSELs; high efficiency 850 nm bottom-emitting VCSELs; high performance wafer-bonded bottom-emitting 850 nm VCSELs; low cost fabrication; sapphire substrates; tight circular beam shape; transparent substrates; transparent undoped GaP; ultralow threshold current; Chaotic communication; Coatings; Integrated circuit interconnections; Microprocessors; Photonics; Space technology; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-5633-0

Type

conf

DOI

10.1109/LEOSST.1999.794716

Filename

794716