DocumentCode
3182781
Title
Three-dimensional photonic crystals at optical and infrared wavelengths
Author
Shawn-Yu Lin ; Fleming, J.G.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1999
fDate
26-27 July 1999
Abstract
We report the realization of a series of silicon 3D photonic crystals operating in the infrared (IR) and near-IR (1-2 μm) wavelengths. The structure maintains its crystal symmetry throughout the entire 6-inches of wafer and holds a complete photonic bandgap. This demonstration opens the door for Si-based photonic crystal devices that are compatible with well developed Si microelectronics processes.
Keywords
integrated circuit technology; integrated optoelectronics; optical fabrication; photonic band gap; silicon; 1 to 2 mum; 3D photonic crystals; 6 in; Si; Si microelectronics processes; Si-based photonic crystal devices; complete photonic bandgap; infrared wavelengths; near-IR wavelengths; optical wavelengths; silicon 3D photonic crystals; High speed optical techniques; Infrared spectra; Laboratories; Optical control; Photonic band gap; Photonic crystals; Planarization; Silicon; Stimulated emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-5633-0
Type
conf
DOI
10.1109/LEOSST.1999.794717
Filename
794717
Link To Document