A novel millimeter-wave HEMT noise modeling procedure

Author

DuFault, M.D. ; Lin, J.Z. ; Sharma, Arvind Kumar

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

939

Abstract

Significant improvements in the accuracy of noise models of millimeter-wave HEMT devices are obtained using on-wafer noise prematched structures and through enhanced accuracy of calibration. This procedure enables scaling of device noise models obtained at microwave frequencies to millimeter wave frequencies. Good correlation between noise parameters of scaled devices with experimental data at millimeter wave frequencies is obtained.<>

Keywords

S-parameters; calibration; electric noise measurement; equivalent circuits; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device models; semiconductor device noise; semiconductor device testing; EHF; MM-wave FET; calibration; millimeter-wave HEMT; noise modeling procedure; noise parameters; onwafer noise prematched structures; scaled devices; Calibration; Frequency; HEMTs; Impedance; Low-frequency noise; Millimeter wave devices; Millimeter wave measurements; Millimeter wave technology; Noise measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405894

Filename

405894