Title :
A novel millimeter-wave HEMT noise modeling procedure
Author :
DuFault, M.D. ; Lin, J.Z. ; Sharma, Arvind Kumar
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Significant improvements in the accuracy of noise models of millimeter-wave HEMT devices are obtained using on-wafer noise prematched structures and through enhanced accuracy of calibration. This procedure enables scaling of device noise models obtained at microwave frequencies to millimeter wave frequencies. Good correlation between noise parameters of scaled devices with experimental data at millimeter wave frequencies is obtained.<>
Keywords :
S-parameters; calibration; electric noise measurement; equivalent circuits; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device models; semiconductor device noise; semiconductor device testing; EHF; MM-wave FET; calibration; millimeter-wave HEMT; noise modeling procedure; noise parameters; onwafer noise prematched structures; scaled devices; Calibration; Frequency; HEMTs; Impedance; Low-frequency noise; Millimeter wave devices; Millimeter wave measurements; Millimeter wave technology; Noise measurement; Testing;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405894
