Title :
GaN-based blue light emitting VCSELs and quantum dot lasers
Author :
Arakawa, Y. ; Someya, T. ; Tachibana, K.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We discussed fabrication and room temperture operation of GaN nitride-based VCSELs and QD lasers. Current injection structures should be the next step for blue light emitting nanostructure/optoelectronic crystal lasers.
Keywords :
III-V semiconductors; gallium compounds; nanostructured materials; optical fabrication; photonic band gap; quantum well lasers; semiconductor quantum dots; semiconductor technology; GaN; GaN-based blue light emitting VCSELs; QD lasers; blue light emitting nanostructure crystal lasers; current injection structures; nitride-based VCSELs; quantum dot lasers; room temperture operation; Electrons; Gallium nitride; Laser excitation; Pump lasers; Quantum dot lasers; Semiconductor lasers; Surface emitting lasers; Temperature; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794721
