Title :
Optimizing the power-added efficiency of a class B GaAs FET amplifier
Author :
LeSage, S.R. ; Detra, J.A. ; Beyer, J.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
A design routine is reported that optimizes the power-added efficiency of a class B microwave amplifier stage. The measured data required consists of device I-V data and one large-signal gain measurement at the microwave frequency of interest. The method is based on a simple circuit model from which the power-added efficiencies, resulting from a specific combination of the variables, can be calculated. Similar to the harmonic balanced method, this simulation iterates between time domain and frequency domain solutions until agreement is reached. Experimental results at 4.4 GHz are reported which support the procedure and which show efficiency increases of 15% when low impedance loading at even-harmonic frequencies are provided.<>
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 4.4 GHz; FET amplifier; GaAs; circuit model; class B; design routine; device I-V data; efficiency increases; frequency domain solutions; large-signal gain measurement; microwave amplifier stage; microwave frequency; optimisation; power-added efficiency; semiconductors; time domain solutions; Design optimization; Frequency measurement; Gain measurement; Gallium arsenide; Microwave FETs; Microwave amplifiers; Microwave devices; Microwave frequencies; Microwave measurements; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22045
