Reliable 2-D carrier profiling with SSRM on InP-based devices

Author

Xu, M.W. ; Hantschel, T. ; Vandervorst, W.

Author_Institution

IMEC, Leuven, Belgium

fYear

2001

fDate

2001

Firstpage

541

Lastpage

544

Abstract

Reliable application of SSRM on InP-based devices requires the use of particular probes. The application of a pyramid metal probe on InP-based device is limited to one time measurements only with limited quantification accuracy whereas with diamond probes repetitive and quantitative measurements are possible. The latter can be explained by the complex oxidation procedure (enhanced by electrical field and local temperature) occurring during the measurements, which is enhanced by the applied electrical field and local temperature due to severe current crowding

Keywords

III-V semiconductors; carrier density; electric resistance measurement; indium compounds; scanning probe microscopy; semiconductor device measurement; 2D carrier profiling; InP; InP device; current crowding; diamond probe; electric field; oxidation; pyramid metal probe; scanning spreading resistance microscopy; Atomic force microscopy; Atomic measurements; Current measurement; Electric variables measurement; Electrical resistance measurement; Force measurement; Indium phosphide; Probes; Scanning electron microscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929204

Filename

929204