Title :
Reliable 2-D carrier profiling with SSRM on InP-based devices
Author :
Xu, M.W. ; Hantschel, T. ; Vandervorst, W.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Reliable application of SSRM on InP-based devices requires the use of particular probes. The application of a pyramid metal probe on InP-based device is limited to one time measurements only with limited quantification accuracy whereas with diamond probes repetitive and quantitative measurements are possible. The latter can be explained by the complex oxidation procedure (enhanced by electrical field and local temperature) occurring during the measurements, which is enhanced by the applied electrical field and local temperature due to severe current crowding
Keywords :
III-V semiconductors; carrier density; electric resistance measurement; indium compounds; scanning probe microscopy; semiconductor device measurement; 2D carrier profiling; InP; InP device; current crowding; diamond probe; electric field; oxidation; pyramid metal probe; scanning spreading resistance microscopy; Atomic force microscopy; Atomic measurements; Current measurement; Electric variables measurement; Electrical resistance measurement; Force measurement; Indium phosphide; Probes; Scanning electron microscopy; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929204
