Title :
Improved Performance Organic Thin-film Transistors with Modified Gate Insulators
Author :
Ling, Chen ; Qing, Zhu Wen ; Yu, Bai ; Xiang, Liu ; Yin, Jiang Xue ; Lin, Zhang Zhi
Author_Institution :
Key Lab. of Adv. Display & Syst. Applic., Shanghai Univ., Shanghai
Abstract :
Organic thin film transistors (OTFTs) with modified gate insulator were demonstrated in this paper. The modified gate insulator layers consisted of SiO2 as the gate insulator and OTS ( octadecyltrichlorosilane ) or PMMA (Poly(methyl methacylate)) as the modified layer. The devices with the modified layer had field-effect mobility larger than 10-3 cm2/Vs, which was twice than that of the OTFT without modification. The on/off current ratio was increased one order of magnitude and reached more than 104. The leakage current was decreased from 10-9 A to 10-10 A. The results demonstrate that using modified gate insulators can obviously improve the performance of the OTFTs.
Keywords :
carrier mobility; insulated gate field effect transistors; leakage currents; organometallic compounds; silicon compounds; thin film transistors; OTFT; PMMA; field-effect mobility; leakage current; modified gate insulators; octadecyltrichlorosilane; on/off current ratio; organic thin-film transistors performance; polymethyl methacylate; Dielectric materials; Dielectrics and electrical insulation; Electrodes; Organic materials; Organic semiconductors; Organic thin film transistors; Plastic insulation; Substrates; Surface treatment; Thin film transistors;
Conference_Titel :
High Density packaging and Microsystem Integration, 2007. HDP '07. International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-1252-8
Electronic_ISBN :
1-4244-1253-6
DOI :
10.1109/HDP.2007.4283618
