Title :
Lumped and distributed scaling of MESFETs
Author_Institution :
Gen. Electr. Co., Syracuse, NY, USA
Abstract :
In power amplifier applications, it is very common to scaleup large MESFETs at the output from smaller MESFET devices that are easily measured and characterized. A systematic procedure is given to predict the small-signal performance of large devices from the measured and well-characterized elementary cells. The emphasis is on the distributed scaling and the method is compared with lumped scaling. Manifold distribution effects and other parasitics (such as airbridges, distribution of via holes) are accounted for. The prediction using distributed scaling showed good agreement with measured results.<>
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; power amplifiers; power transistors; semiconductor device models; solid-state microwave devices; airbridges; distributed scaling; distribution effects; distribution of via holes; large MESFETs; lumped scaling; measured results; parasitics; power amplifier; small-signal performance; systematic procedure; well-characterized elementary cells; Bonding; Cutoff frequency; Electric variables measurement; FETs; Fingers; Frequency measurement; Inductance; Laboratories; MESFETs; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22048
