Sub-ten nanosecond phase cycling of high contrast GeSbTe- and AgInSbTe-films

Author

Schropp, A. ; Siegel, J. ; Solis, J. ; Afonso, C.N. ; Wuttig, M.

Author_Institution

Inst. de Opt., CSIC, Madrid, Spain

fYear

2003

fDate

22-27 June 2003

Firstpage

748

Abstract

GeSbTe and AglnSbTe compounds are currently receiving strong interest as suitable materials for optical data storage devices. We have set out to determine the cycability of samples with maximum optical contrast between phases using shorter pulse durations. It is possible to amorphize and recrystallize both GeSbTe-compositions with laser pulses of a few nanoseconds and that the transformation is accomplished in the sub-ten nanosecond regime. Thus, phase cycling with high optical contrast (up to 30 % for Ge4Sb,Te5) can be achieved without compromising the transformation speed.

Keywords

III-V semiconductors; III-VI semiconductors; amorphisation; laser beam effects; optical films; optical storage; recrystallisation; reflectivity; AgInSbTe; AgInSbTe-films; GeSbTe; GeSbTe films; amorphization; laser pulses; optical contrast; optical data storage devices; recrystallization; samples cycability; sub-ten nanosecond phase cycling; Crystalline materials; Crystallization; Laser transitions; Optical devices; Optical materials; Optical pulses; Phase change materials; Phase measurement; Pulse measurements; Reflectivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1313828

Filename

1313828