Title :
A comparison of gettering in single- and multicrystalline silicon for solar cells
Author :
Sopori, B.L. ; Jastrzebski, L. ; Tan, T.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells
Keywords :
crystal defects; elemental semiconductors; getters; impurities; rapid thermal annealing; semiconductor materials; silicon; solar cells; Si; gettering regions saturation; impurity gettering; impurity-defect interactions; multicrystalline silicon; rapid thermal annealing; single-crystal silicon; solar cells; thermal processing; Aluminum; Fabrication; Gettering; Hydrogen; Impurities; Photovoltaic cells; Semiconductor device modeling; Silicon; Temperature distribution; Ultrasonic imaging;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564206
