Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

Author

Shih, Ding-Kang ; Lin, Hao-Hsiung ; Song, Li-Wei ; Chu, Tso-Yu ; Yang, T.R.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2001

fDate

2001

Firstpage

555

Lastpage

558

Abstract

The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed

Keywords

Fourier transform spectra; Hall effect; III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; effective mass; indium compounds; infrared spectra; plasma deposited coatings; semiconductor epitaxial layers; semiconductor growth; Burstein-Moss effect; FTIR spectra; Hall effect; III-V semiconductor alloy; InAsN; InAsN film; InP(100) substrate; double crystal X-ray diffraction; electrical properties; electron effective mass; fundamental absorption edge; optical properties; plasma assisted gas source molecular beam epitaxy; structural properties; Electric variables measurement; Electron optics; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Optical films; Plasma measurements; Plasma properties; Plasma sources; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929209

Filename

929209