DocumentCode
3183435
Title
GaInNP: a novel material for electronic and optoelectronic applications
Author
Tu, C.W. ; Hong, Y.G. ; André, R. ; Xin, H.P.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fYear
2001
fDate
2001
Firstpage
591
Lastpage
594
Abstract
Adding ~0.5% N to GaInP grown on GaAs results in near zero conduction band discontinuity, and, thus, GaInNP could be an ideal material for HBTs. Adding also ~0.5% N to GaP results in direct bandgap, and GaNP/GaP light-emitting diodes are demonstrated
Keywords
III-V semiconductors; conduction bands; energy gap; gallium compounds; heterojunction bipolar transistors; indium compounds; light emitting diodes; GaInNP; conduction band discontinuity; direct bandgap; electronic material; heterojunction bipolar transistor; light emitting diode; optoelectronic material; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Plasma temperature; Radio frequency; Substrates; Surface emitting lasers; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929221
Filename
929221
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