DocumentCode :
3183477
Title :
1.31 μm GaInNAsSb/GaNAs-SQW lasers grown by gas-source MBE
Author :
Shimizu, H. ; Kumada, K. ; Uchiyama, S. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fYear :
2001
fDate :
2001
Firstpage :
595
Lastpage :
598
Abstract :
1.31 μm GaInNAsSb single quantum-well (SQW) lasers were successfully grown on GaAs substrates by gas-source molecular beam epitaxy (CSMBE). We obtained the very low threshold current density (Jth) of 570 A/cm2 at 900 μm-long cavity
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; 1.31 micron; GaAs substrate; GaInNAsSb single quantum well laser; GaInNAsSb-GaNAs; gas source MBE growth; threshold current density; Annealing; Atmosphere; Bonding; Crystallization; Equations; Gallium arsenide; Gas lasers; Indium; Nitrogen; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
ISSN :
1092-8669
Print_ISBN :
0-7803-6700-6
Type :
conf
DOI :
10.1109/ICIPRM.2001.929223
Filename :
929223
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3183477
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