DocumentCode
3183603
Title
Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems
Author
Takahashi, T. ; Nihei, M. ; Makiyama, K. ; Nishi, M. ; Suzuki, T. ; Hara, N.
Author_Institution
Fujitsu Labs. Ltd., Kanagawa, Japan
fYear
2001
fDate
2001
Firstpage
614
Lastpage
617
Abstract
We developed thermally stable InAlAs/InGaAs HEMTs which have uniform offset-voltage in differential amplifiers. The standard deviation of their offset-voltages is only 6.2 mV, and their threshold voltage changes by less than 11 mV when they are annealed for 60 minutes at 330°C. These properties are essential for the operation of 40-Gbit/s optical communication circuits
Keywords
HEMT integrated circuits; III-V semiconductors; aluminium compounds; annealing; differential amplifiers; gallium arsenide; indium compounds; optical communication equipment; thermal stability; 330 C; 40 Gbit/s; InAlAs-InGaAs; InAlAs/InGaAs HEMT IC; annealing; differential amplifier; offset voltage; optical communication circuit; thermal stability; threshold voltage; Circuits; Epitaxial layers; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Threshold voltage; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929230
Filename
929230
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