Title :
Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems
Author :
Takahashi, T. ; Nihei, M. ; Makiyama, K. ; Nishi, M. ; Suzuki, T. ; Hara, N.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
We developed thermally stable InAlAs/InGaAs HEMTs which have uniform offset-voltage in differential amplifiers. The standard deviation of their offset-voltages is only 6.2 mV, and their threshold voltage changes by less than 11 mV when they are annealed for 60 minutes at 330°C. These properties are essential for the operation of 40-Gbit/s optical communication circuits
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; annealing; differential amplifiers; gallium arsenide; indium compounds; optical communication equipment; thermal stability; 330 C; 40 Gbit/s; InAlAs-InGaAs; InAlAs/InGaAs HEMT IC; annealing; differential amplifier; offset voltage; optical communication circuit; thermal stability; threshold voltage; Circuits; Epitaxial layers; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Threshold voltage; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929230
