DocumentCode :
3184221
Title :
A monolithic reduced-size Ku-band SPDT FET switch
Author :
Bryant, D.T.
Author_Institution :
Texas Instrum., Dallas, TX, USA
fYear :
1988
fDate :
25-27 May 1988
Firstpage :
371
Abstract :
A GaAs Ku-band monolithic single-pole double-throw (SPDT) FET switch has been designed and demonstrated. Small-signal insertion loss is less than 1.4 dB over a 14-GHz-to-18-GHz bandwidth with a VSWR (voltage standing-wave ratio) less than 1.5:1. The common terminal-to-off-channel isolation exceeds 18 dB. The switching is achieved with a -4.5-V signal on the gate of the on-channel FET with the other gate at 0 V. The switching current requirement is only the reverse bias gate leakage current (typically 3 mu A). Large-signal performance is similar with a -10-V control signal. The small chip size, 1.3 mm*1.3 mm*0.15 mm, permits more than 2300 monolithic switches to be fabricated on a single 3-in GaAs wafer.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; semiconductor switches; solid-state microwave devices; -4.5 V; 1.3 mm; 1.4 dB; 14 to 18 GHz; 18 dB; 4 GHz; GaAs; Ku-band; SHF; SPDT FET switch; VSWR; bandwidth; chip size; gate leakage current; insertion loss; monolithic switches; on-channel FET; semiconductors; single-pole double-throw; switching current requirement; terminal-to-off-channel isolation; Bandwidth; Capacitance; Distributed parameter circuits; FETs; Gallium arsenide; Impedance; Insertion loss; Power transmission lines; Shunt (electrical); Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/MWSYM.1988.22053
Filename :
22053
Link To Document :
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