Title :
Mc-Si thin film solar cells by fast CVD on low cost SSP pre-ribbons
Author :
Faller, F. ; Schillinger, N. ; Hurrle, A. ; Schetter, C. ; Eyer, A.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesyst., Freiburg, Germany
Abstract :
Silicon films 40-90 μm thick were epitaxially deposited on fast-grown mc-SSP pre-ribbons. Special attention was focused on the design of the authors´ self-constructed CVD system. It is principally convertable into a conveyer-belt system for a high continuous throughput, which is needed to be economically competitive. With high deposition rates of up to 10 μm/min, the epi-layers revealed diffusion lengths of 250 μm on ⟨100⟩-Cz substrates, 150 μm on SILSO and 11-30 μm on SSP pre-ribbons (all substrates highly doped). Solar cells were manufactured using the authors´ standard cell process. No passivation or gettering steps were performed and no texturing was applied. Solar cell efficiencies of 12.8% on Cz, 11.1% on SILSO wafers and 6.1% on SSP were achieved
Keywords :
CVD coatings; chemical vapour deposition; elemental semiconductors; epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; 11 to 30 mum; 11.1 percent; 12.8 percent; 150 mum; 250 mum; 40 to 90 mum; 6.1 percent; SILSO wafers; SSP pre-ribbons; Si; Si thin film solar cells; continuous throughput; conveyer-belt system; deposition rate; epitaxial deposition; fast CVD; highly doped substrates; semiconductor; Costs; Gettering; Manufacturing processes; Passivation; Photovoltaic cells; Semiconductor films; Silicon; Substrates; Throughput; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564211
