Title :
Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell
Author :
Yamamoto, Kenji ; Suzuki, Takayuki ; Yoshimi, Masashi ; Nakajima, Akihiko
Author_Institution :
Central Res. Labs., Kaneka Corp., Kobe, Japan
Abstract :
The excellent high short circuit current density (Jsc) above 24 mA/cm2 and the efficiency of 6.8% at the 6 μm thin cell fabricated on glass substrate is demonstrated. This advantage of high Jsc was applied to the a-Si:H(0.3 μnm)/polycrystalline-Si(6 μm) tandem solar cell, which exhibits the efficiency of 10.4% and the Jsc of 11.6 mA/cm2. We have found that the textured Si thin film can be prepared by adjusting the deposition conditions. The 4 μm thick textured Si thin film showed an effective optical thickness of 67 μm and corresponding effective optical pass length of 16 times the layer thickness
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor thin films; short-circuit currents; silicon; solar cells; 10.4 percent; 300 nm; 4 mum; 6 mum; 6.8 percent; 67 mum; Si:H-Si; a-Si:H/polycrystalline Si tandem solar cell; deposition conditions; effective optical pass length; effective optical thickness; glass substrate; high short circuit current density; low temperature fabrication; textured Si thin film; thin film polycrystalline Si solar cell; Fabrication; Glass; Optical films; Photovoltaic cells; Semiconductor thin films; Short circuit currents; Sputtering; Substrates; Temperature; Thin film circuits;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564215
