Title :
Huge bistabilities at high optical injection level
Author :
Blin, S. ; Besnard, P. ; Gabef, R. ; Stéphan, G.
Author_Institution :
ENSSAT, Lannion, France
Abstract :
This work shows that at high injected power (> 0 dBm), huge bistable area (extending over 11 dB and 35 GHz) for a slave laser operating at four times its threshold (the optical output power is equal to 5 dBm). Moreover, for moderate injected power (-10 dBm), that are usually presented in the literature, the authors observe multistability that has been already predicted.
Keywords :
optical bistability; semiconductor lasers; 35 GHz; multistability; optical bistabilities; optical injection level; Frequency; Laser modes; Master-slave; Optical bistability; Optical fiber polarization; Optical mixing; Power generation; Power lasers; Semiconductor lasers; Stimulated emission;
Conference_Titel :
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN :
0-7803-7733-8
DOI :
10.1109/EQEC.2003.1313900