DocumentCode
3184582
Title
Huge bistabilities at high optical injection level
Author
Blin, S. ; Besnard, P. ; Gabef, R. ; Stéphan, G.
Author_Institution
ENSSAT, Lannion, France
fYear
2003
fDate
22-27 June 2003
Firstpage
43
Abstract
This work shows that at high injected power (> 0 dBm), huge bistable area (extending over 11 dB and 35 GHz) for a slave laser operating at four times its threshold (the optical output power is equal to 5 dBm). Moreover, for moderate injected power (-10 dBm), that are usually presented in the literature, the authors observe multistability that has been already predicted.
Keywords
optical bistability; semiconductor lasers; 35 GHz; multistability; optical bistabilities; optical injection level; Frequency; Laser modes; Master-slave; Optical bistability; Optical fiber polarization; Optical mixing; Power generation; Power lasers; Semiconductor lasers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN
0-7803-7733-8
Type
conf
DOI
10.1109/EQEC.2003.1313900
Filename
1313900
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