DocumentCode :
3184672
Title :
Optimization of distributed monolithic GaAs amplifiers using an analytical/graphical technique
Author :
Ross, M. ; Harrison, R.G.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fYear :
1988
fDate :
25-27 May 1988
Firstpage :
379
Abstract :
An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<>
Keywords :
field effect integrated circuits; microwave amplifiers; microwave integrated circuits; optimisation; 1-dB bandwidth requirements; FET dimensions; GaAs; MMIC; analytical procedure; artificial transmission lines; close approximation; distributed amplifiers; given specific gain; graphical procedure; lumped inductors values; monolithic microwave amplifiers; optimisation; optimum design; optimum number of stages; Capacitance; Cutoff frequency; Distributed amplifiers; Equivalent circuits; FETs; Gallium arsenide; Impedance; MESFET circuits; Microwave Theory and Techniques Society; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/MWSYM.1988.22055
Filename :
22055
Link To Document :
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