DocumentCode
3185620
Title
The conductivity and TEMF of MoS2 with Mo2 S3 additive
Author
Yakovleva, G.E. ; Berdinsky, A.S. ; Romanenko, A.I. ; Khabarov, S.P. ; Fedorov, V.E.
Author_Institution
Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear
2015
fDate
25-29 May 2015
Firstpage
12
Lastpage
14
Abstract
Transition-metal chalcogenides are prospective thermoelectric materials. One of them is a molybdenum disulfide MoS2, which has a layered structure. MoS2 has a good potential to have a high value of thermoelectric quality factor due to a high value of thermo-EMF and low value of thermal conductivity. But a low value of its electrical conductivity suppresses the thermoelectric quality factor ZT on the level of 0.1 at high temperatures. Present work shows the influence of metal addition to MoS2 on electrical conductivity and Seebeck coefficient (SC) of final mixture. Mo2S3 was chosen as a metal addition. Mo2S3 has an electrical conductivity of 330 S/m and thermo-EMF of 10 μV/K at 300K. Bulk powder samples of MoS2 with addition of 3, 6, 10, 30 and 60 wt% Mo2S3 were studied. An electrical conductivity of samples was measured in temperature range: 77 K - 423 K. All samples have shown semiconductor hopping conductivity with variable hopping length. The SC was measured in the temperature range of 300K - 500K. The addition of Mo2S3 decrease SC from 300μV/K to 75μV/K.
Keywords
Seebeck effect; amorphous semiconductors; electric potential; hopping conduction; molybdenum compounds; thermal conductivity; Mo2S3; MoS2; Seebeck coefficient; TEMF; electrical conductivity; molybdenum disulfide; semiconductor hopping conductivity; temperature 300 K to 500 K; temperature 77 K to 423 K; thermal conductivity; thermo-EMF; thermoelectric materials; thermoelectric quality factor; transition-metal chalcogenides; Conductivity; Q-factor; Reactive power; Temperature distribution; Temperature measurement; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2015 38th International Convention on
Conference_Location
Opatija
Type
conf
DOI
10.1109/MIPRO.2015.7160229
Filename
7160229
Link To Document