Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

Author

Razavi, Pedram ; Orouji, Ali A.

Author_Institution

Dept. of Electr. Eng., Semnan Univ., Semnan

fYear

2008

fDate

6-8 Oct. 2008

Firstpage

83

Lastpage

86

Abstract

In this paper, short channel effects of the sub-100nm modified symmetric double-gate MOSFET that made of dual material gates and oxide stack with high-k material on top of a SiO₂ layer examined and compared with conventional symmetric double-gate MOSFET using two-dimensional (2-D) simulation. This structure reduces short channel effects (SCEs) such as drain-induced barrier lowering (DIBL), hot electron effect and threshold voltage roll-off and has better current characteristics when compared to the conventional double-gate MOSFET.

Keywords

MOSFET; dielectric materials; hot carriers; numerical analysis; reliability; semiconductor device models; silicon compounds; SiO₂; current characteristics; drain-induced barrier lowering; dual material gate oxide stack symmetric double gate MOSFET; hot electron effect; reliability; short channel effects; threshold voltage roll-off; two-dimensional simulation; Doping; High K dielectric materials; High-K gate dielectrics; Hot carrier effects; Inorganic materials; Lead compounds; MOSFET circuits; Permittivity; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic

Conference_Location

Tallinn

ISSN

1736-3705

Print_ISBN

978-1-4244-2059-9

Electronic_ISBN

1736-3705

Type

conf

DOI

10.1109/BEC.2008.4657483

Filename

4657483