DocumentCode
3185893
Title
Charge carrier transport in SiC Schottky interfaces: Shape factor approach
Author
Kurel, Raido ; Rang, Toomas ; Rang, Galina ; Kasemaa, Argo
Author_Institution
Tallinn Univ. of Technol., Tallinn
fYear
2008
fDate
6-8 Oct. 2008
Firstpage
87
Lastpage
90
Abstract
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is discussed. Unified handling methodology has been demonstrated.
Keywords
Schottky barriers; Schottky effect; carrier density; silicon compounds; wide band gap semiconductors; SiC; ambient temperature; barrier height; charge carrier transport; impurity concentration; shape factor; silicon carbide Schottky interfaces; Charge carriers; Chemical technology; Current density; Electron mobility; Equations; Impurities; Semiconductor materials; Shape; Silicon carbide; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic
Conference_Location
Tallinn
ISSN
1736-3705
Print_ISBN
978-1-4244-2059-9
Electronic_ISBN
1736-3705
Type
conf
DOI
10.1109/BEC.2008.4657484
Filename
4657484
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