High performance GaAs power diodes

Author

Voitovich, Viktor ; Rang, Toomas ; Rang, Galina ; Pikkov, Mihhail

Author_Institution

Clifton Ltd., Tartu

fYear

2008

fDate

6-8 Oct. 2008

Firstpage

111

Lastpage

114

Abstract

Films deposited with the Liquid Phase Epitaxy (LPE)technology on the monocristallic GaAs substrates for high voltage power p+-p-i-n-n+ GaAs structures has been developed. Proposed technological and hardware solutions of LPE allow the high efficiency of growing process of diode structures with defined ratings and high structural quality of epitaxial layers. The method and technology for fabrication of GaAs dies for nanosecond range with reverse voltage up to 1200V and current up to 100A is introduced The reverse recovery time of 20 nsec was achieved and could be preserved up to +260degC.

Keywords

III-V semiconductors; gallium arsenide; liquid phase epitaxial growth; p-i-n diodes; power semiconductor diodes; semiconductor epitaxial layers; GaAs; LPE; epitaxial layers; high voltage power p+-p-i-n-n+ GaAs structures; liquid phase epitaxy technology; monocristallic GaAs substrates; power diodes; Crystalline materials; Epitaxial growth; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Semiconductor diodes; Silicon carbide; Temperature; Voltage; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic

Conference_Location

Tallinn

ISSN

1736-3705

Print_ISBN

978-1-4244-2059-9

Electronic_ISBN

1736-3705

Type

conf

DOI

10.1109/BEC.2008.4657490

Filename

4657490