Title :
V-band monolithic power MESFET amplifiers
Author :
Hegazi, G. ; Hung, H.-L. ; Phelleps, F. ; Holdeman, L. ; Cornfeld, A. ; Smith, T. ; Allison, J. ; Huang, H.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
Monolithic GaAs power amplifiers developed for V-band applications are described. A single-stage amplifier provided >4-dB gain from 50 to 56 GHz, with output power of 95 mW and a power-added efficiency of 11% at 55 GHz. A cascaded amplifier achieved 16.2-dB gain and output power of 85 mW. An optimized device structure together with computer-aided design (CAD) programs resulted in the use of MESFETs with larger gate width than those previously reported, achieving the high-output-power monolithic circuits from the initial design. Built-in, DC-blocking capacitors and bias networks allowed the cascading of these MMICs, providing usable power gain with stable operation.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; power amplifiers; 11 percent; 16.2 dB; 4 dB; 50 to 56 GHz; 85 mW; 95 mW; CAD; DC-blocking capacitors; EHF; GaAs; III-V semiconductors; MM-wave circuits; MMICs; V-band; bias networks; cascaded amplifier; computer-aided design; microwave IC; millimetre-wave operation; monolithic circuits; power MESFET amplifiers; single-stage amplifier; stable operation; Application software; Capacitors; Circuits; Design automation; Design optimization; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22062
