Title :
Ka-band 1 watt power GaAs MMICs
Author :
Oda, Y. ; Arai, S. ; Yoshida, T. ; Nakamura, H. ; Yanagawa, S. ; Hori, S. ; Kamei, K.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
High-power and high-gain Ka-band GaAs monolithic microwave integrated circuits (MMICs) were developed using a Be coimplantation technique. At 29.5 GHz, an output power of 1 W with 4.2 dB gain was obtained for a 4.8-mm width MMIC. An intercept point of +42 dBm has been obtained from the third-order intermodulation distortion measurement.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; ion implantation; microwave amplifiers; microwave integrated circuits; power amplifiers; power integrated circuits; 1 W; 29.5 GHz; 4.2 dB; 4.8 mm; Be coimplantation technique; GaAs:Be,Si; III-V semiconductors; Ka-band; MMICs; SHF; high-gain; microwave amplifier; monolithic microwave integrated circuits; Distortion measurement; Gain; Gallium arsenide; Integrated circuit measurements; Intermodulation distortion; MMICs; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22063
