Field theory analysis of distributed microwave effects in high speed semiconductor lasers and their interconnection with passive microwave transmission lines

This paper present a rigorous field theory analysis of the distributed microwave effects in high speed semiconductor lasers by using a combination of a self-consistent complex finite difference method with the frequency-domain TLM method (FDTLM). The semiconductor laser is treated as a lossy multilayer slow-wave microstrip transmission line. The conductivity profile in the active layer is obtained by a self-consistent solution of the nonlinear semiconductor device equations. The attenuation factor, phase velocity and characteristic impedance of the semiconductor laser are presented for the unbiased and forward-biased case and compared with experimental results. On the basis of this analysis we present the interconnection effects between passive microwave transmission lines and laser diodes using airbridge or flip-chip transitions.<>