DocumentCode :
3186558
Title :
Electromagnetic only HEMT model for switch design
Author :
Zhu, Yu ; Wei, Cejun ; Nohra, George ; Zhang, Cindy ; Klimashov, Oleksiv ; Yin, Hong ; Bartle, Dylan
Author_Institution :
Skyworks Solutions Inc., Woburn, MA, USA
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
273
Lastpage :
276
Abstract :
Electromagnetic (EM) only HEMT model has been proposed and realized with commercial available EM simulator. EM analysis has been applied, for the first time, to the intrinsic part of HEMT device. The small signal behaviors of HEMT can be accurately predicted based directly on the layout and process information. After introducing two EM HEMT models for HEMTs in both on and off states, entire switch circuit, as a whole, can be EM simulated. The prediction accuracy for switch performance can be remarkably improved by taking into account all of the distributed and coupling effects inside the circuit.
Keywords :
field effect transistor switches; electromagnetic only HEMT model; layout information; process information; switch design; Accuracy; Circuit analysis; Circuit simulation; Computational modeling; Coupling circuits; Electromagnetic modeling; HEMTs; Predictive models; Switches; Switching circuits; Electromagnetic analysis; HEMT; MMICs; modeling; simulation; switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5385384
Filename :
5385384
Link To Document :
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