DocumentCode
3186558
Title
Electromagnetic only HEMT model for switch design
Author
Zhu, Yu ; Wei, Cejun ; Nohra, George ; Zhang, Cindy ; Klimashov, Oleksiv ; Yin, Hong ; Bartle, Dylan
Author_Institution
Skyworks Solutions Inc., Woburn, MA, USA
fYear
2009
fDate
7-10 Dec. 2009
Firstpage
273
Lastpage
276
Abstract
Electromagnetic (EM) only HEMT model has been proposed and realized with commercial available EM simulator. EM analysis has been applied, for the first time, to the intrinsic part of HEMT device. The small signal behaviors of HEMT can be accurately predicted based directly on the layout and process information. After introducing two EM HEMT models for HEMTs in both on and off states, entire switch circuit, as a whole, can be EM simulated. The prediction accuracy for switch performance can be remarkably improved by taking into account all of the distributed and coupling effects inside the circuit.
Keywords
field effect transistor switches; electromagnetic only HEMT model; layout information; process information; switch design; Accuracy; Circuit analysis; Circuit simulation; Computational modeling; Coupling circuits; Electromagnetic modeling; HEMTs; Predictive models; Switches; Switching circuits; Electromagnetic analysis; HEMT; MMICs; modeling; simulation; switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location
Singapore
Print_ISBN
978-1-4244-2801-4
Electronic_ISBN
978-1-4244-2802-1
Type
conf
DOI
10.1109/APMC.2009.5385384
Filename
5385384
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