• DocumentCode
    3186558
  • Title

    Electromagnetic only HEMT model for switch design

  • Author

    Zhu, Yu ; Wei, Cejun ; Nohra, George ; Zhang, Cindy ; Klimashov, Oleksiv ; Yin, Hong ; Bartle, Dylan

  • Author_Institution
    Skyworks Solutions Inc., Woburn, MA, USA
  • fYear
    2009
  • fDate
    7-10 Dec. 2009
  • Firstpage
    273
  • Lastpage
    276
  • Abstract
    Electromagnetic (EM) only HEMT model has been proposed and realized with commercial available EM simulator. EM analysis has been applied, for the first time, to the intrinsic part of HEMT device. The small signal behaviors of HEMT can be accurately predicted based directly on the layout and process information. After introducing two EM HEMT models for HEMTs in both on and off states, entire switch circuit, as a whole, can be EM simulated. The prediction accuracy for switch performance can be remarkably improved by taking into account all of the distributed and coupling effects inside the circuit.
  • Keywords
    field effect transistor switches; electromagnetic only HEMT model; layout information; process information; switch design; Accuracy; Circuit analysis; Circuit simulation; Computational modeling; Coupling circuits; Electromagnetic modeling; HEMTs; Predictive models; Switches; Switching circuits; Electromagnetic analysis; HEMT; MMICs; modeling; simulation; switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. APMC 2009. Asia Pacific
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2801-4
  • Electronic_ISBN
    978-1-4244-2802-1
  • Type

    conf

  • DOI
    10.1109/APMC.2009.5385384
  • Filename
    5385384