A 3.5 GHz medium power amplifier using 0.15 µm GaAs PHEMT for WiMAX applications

Author

Rasmi, Amiza ; Marzuki, A. ; Abd Rahim, A.I. ; Yahya, M. Razman ; Mat, A. Fatah Awang

Author_Institution

Telekom R&D Sdn Bhd, TM Innovation Centre, Cyberjaya, Malaysia

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

277

Lastpage

280

Abstract

This paper presents the design and measurement of a single-ended medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for 802.16 WiMAX applications. At a supply voltage of 3.0 V and 3.5 GHz operating frequency, a single-ended MPA achieves input return loss of 14.11 dB, output return loss of 12.38 dB, small-signal gain (S21) of 8.34 dB, P1dB of 16.81 dBm, power gain of 6.81 dB and the PAE of 16.74%. The die size of this amplifier is 1.2 mm Ã— 0.7 mm. The maximum current, I_max is 80.70 mA and the power consumption of the device is 242.10 mW.

Keywords

WiMax; gallium arsenide; high electron mobility transistors; power amplifiers; 802.16 WiMAX applications; GaAs; PHEMT technology; current 80.70 mA; efficiency 16.74 percent; frequency 3.5 GHz; gain 6.81 dB; gain 8.34 dB; loss 12.38 dB; loss 14.11 dB; power 242.10 mW; single-ended medium power amplifier; size 0.15 μm; voltage 3 V; Frequency; Gain; Gallium arsenide; High power amplifiers; Impedance matching; Linearity; PHEMTs; Power amplifiers; Power generation; WiMAX; 3.5 GHz; GaAs PHEMT; Power amplifier; WiMAX applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5385387

Filename

5385387