Title :
A receiver front-end design in 0.13 µm CMOS for multiband OFDM UWB system
Author :
Park, Bonghyuk ; Lee, Kwangchun ; Choi, Sangsung
Author_Institution :
ETRI, Daejeon, South Korea
Abstract :
A fully integrated 0.13-μm CMOS receiver front-end for UWB applications is implemented. This receiver enables 8 bands of operation covering 3.1 to 9.0 GHz and consists of a zero-IF receive chain. The shunt-series feedback LNA provides a receiver noise figure of 7.1 to 9.5 dB over 6 GHz bandwidth. The mixer, based on folded-cascode topology, also implements a 3-stage variable gain amplifier and a 1-stage fixed gain amplifier. The average conversion gain and input P1dB are 67.3 dB and -25.4 dBm, respectively. Fabricated die has been bonded and packaged on PCB for measurement. The receiver front-end chip draws 48 mA from 1.2 V power supply.
Keywords :
CMOS analogue integrated circuits; OFDM modulation; low noise amplifiers; microwave amplifiers; microwave mixers; microwave receivers; ultra wideband technology; 1-stage fixed gain amplifier; 3-stage variable gain amplifier; CMOS receiver front-end; PCB; current 48 mA; folded-cascode mixer; frequency 3.1 GHz to 9.0 GHz; multiband OFDM UWB system; noise figure 7.1 dB to 9.5 dB; shunt-series feedback LNA; size 0.13 μm; voltage 1.2 V; zero-IF receive chain; Bandwidth; Bonding; Feedback; Gain; Noise figure; OFDM; Packaging; Power supplies; Semiconductor device measurement; Topology; CMOS; UWB; low noise amplifier (LNA); mixer; programmable gain amplifier (PGA);
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5385394
