Title :
A monolithic four quadrant analog multiplier circuit using GaAs MESFET transistors
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
A design for a four-quadrant analog multiplier using GaAs MESFET transistors is presented. The circuit permits operation at frequencies up to 1.0 gigahertz with errors less than 1% with inputs varying over a range -0.6 V⩽Vin⩽0.6 V. The static power dissipated by the circuit is 138 mW. The author includes principles of operation and an estimate of accuracy, complete details of the multiplier circuitry, and the results of a SPICE simulation
Keywords :
SPICE; Schottky gate field effect transistors; analogue processing circuits; circuit CAD; field effect integrated circuits; gallium arsenide; linear integrated circuits; multiplying circuits; 1 GHz; 138 mW; MESFET transistors; SPICE simulation; design; monolithic four quadrant analog multiplier; operation; static power; Doping; Equations; Frequency; Gallium arsenide; MESFET circuits; MOSFETs; Operational amplifiers; Semiconductor process modeling; Summing circuits; Voltage;
Conference_Titel :
Aerospace and Electronics Conference, 1992. NAECON 1992., Proceedings of the IEEE 1992 National
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-0652-X
DOI :
10.1109/NAECON.1992.220661
