Title :
A 43 GHz-band balanced low-noise amplifier
Author :
Ishizaki, M. ; Hamabe, Takashi ; Oohashi, Y. ; Asai, S. ; Kasuga, T. ; Miyazawa, K.
Author_Institution :
Fujitsu Lab. Ltd., Kanagawa, Japan
Abstract :
A description is given of a 43-GHz-band balanced low-noise amplifier using high-electron-mobility transistors (HEMTs) with a gate length of 0.25 mu m. To reduce the loss, a 3-dB hybrid circuit formed by waveguide branch lines was used for the input/output sections of the amplifier. The amplifier has a gain of 9 dB, a noise figure of 5 dB or less, and an input/output VSWR (virtual standing-wave ratio) of 1.5 or less from 40 to 45.5 GHz. It has a gain of 10 dB and a noise figure of 4.3 dB or less at -30 degrees C (ambient temperature).<>
Keywords :
high electron mobility transistors; microwave amplifiers; microwave integrated circuits; -30 degC; 0.25 micron; 3-dB hybrid circuit; 4.3 dB; 40 to 45.5 GHz; 9 to 10 dB; EHF; HEMTs; MM-wave type; balanced low-noise amplifier; high-electron-mobility transistors; input/output sections; microwave amplifier; radioastronomical receiver; submicron gate length; waveguide branch lines; Equivalent circuits; Gain measurement; HEMTs; Loss measurement; Low-noise amplifiers; MODFETs; Noise figure; Observatories; Scattering parameters; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22074
