Title :
Total dose characterization of the PACE 1750A microprocessor chipset
Author :
Regula, Marek ; Pedersen, Ole ; Konegen, Rudolf R.
Author_Institution :
Space Satellite Syst., Daimler-Benz Aerosp. AG, Munchen, Germany
Abstract :
Total dose irradiation characterization testing of the PACE 1750A SOS chipset built on commercial SOS material and of the chipset manufactured using the Westinghouse radiation enhanced process based on 5416 Aerorad Sarnoff silicon epilayer wafers has been performed by Performance Semiconductor Corporation (PSC) and by Daimler-Benz Aerospace (Dasa). Total dose tolerance of the non-hardened chipsets varied between <10 krad(Si) and >100 krad(Si). The radiation hardened chipsets were all radiation hard to levels ⩾100 krad(Si)
Keywords :
CMOS digital integrated circuits; aerospace computing; computer testing; integrated circuit testing; microprocessor chips; radiation effects; radiation hardening (electronics); special purpose computers; 10 to 100 krad; 5416 Aerorad Sarnoff Si epilayer wafers; Daimler-Benz Aerospace; PACE 1750A microprocessor chipset; Performance Semiconductor Corporation; SOS chipset; Si; Si-Al2O3; Westinghouse radiation enhanced process; commercial SOS material; irradiation characterization; irradiation characterization testing; nonhardened chipsets; radiation hardened chipsets; total dose characterization; Aerospace materials; Aerospace testing; Manufacturing processes; Materials testing; Microprocessors; Performance evaluation; Semiconductor device manufacture; Semiconductor device testing; Semiconductor materials; Silicon;
Conference_Titel :
Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE
Conference_Location :
Madison, WI
Print_ISBN :
0-7803-3100-1
DOI :
10.1109/REDW.1995.483400
