Total dose characterization of the PACE 1750A microprocessor chipset

Author

Regula, Marek ; Pedersen, Ole ; Konegen, Rudolf R.

Author_Institution

Space Satellite Syst., Daimler-Benz Aerosp. AG, Munchen, Germany

fYear

1995

fDate

34899

Firstpage

64

Lastpage

70

Abstract

Total dose irradiation characterization testing of the PACE 1750A SOS chipset built on commercial SOS material and of the chipset manufactured using the Westinghouse radiation enhanced process based on 5416 Aerorad Sarnoff silicon epilayer wafers has been performed by Performance Semiconductor Corporation (PSC) and by Daimler-Benz Aerospace (Dasa). Total dose tolerance of the non-hardened chipsets varied between <10 krad(Si) and >100 krad(Si). The radiation hardened chipsets were all radiation hard to levels ⩾100 krad(Si)

Keywords

CMOS digital integrated circuits; aerospace computing; computer testing; integrated circuit testing; microprocessor chips; radiation effects; radiation hardening (electronics); special purpose computers; 10 to 100 krad; 5416 Aerorad Sarnoff Si epilayer wafers; Daimler-Benz Aerospace; PACE 1750A microprocessor chipset; Performance Semiconductor Corporation; SOS chipset; Si; Si-Al₂O₃; Westinghouse radiation enhanced process; commercial SOS material; irradiation characterization; irradiation characterization testing; nonhardened chipsets; radiation hardened chipsets; total dose characterization; Aerospace materials; Aerospace testing; Manufacturing processes; Materials testing; Microprocessors; Performance evaluation; Semiconductor device manufacture; Semiconductor device testing; Semiconductor materials; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE

Conference_Location

Madison, WI

Print_ISBN

0-7803-3100-1

Type

conf

DOI

10.1109/REDW.1995.483400

Filename

483400