Early voltage of SiGe heterojunction bipolar transistors

Author

Yuan, J.S. ; Song, J.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1997

fDate

35672

Firstpage

102

Lastpage

105

Abstract

An analytical equation of the Early voltage, including the neutral-base recombination effect, is evaluated. The general analytical equation is valid for SiGe bipolar transistors with a flat, trapezoid, linear, or stepped Ge profile in the base. The present model predictions are compared with other published results and experimental data. The agreement between this work and experimental data is excellent. The analytical predictions without taking into account neutral-base recombination are overestimated. The model predictions, taking into account 100% neutral-base recombination, however, gives a fixed normalized Early voltage of 0.5, independent of Ge grading

Keywords

Ge-Si alloys; electron-hole recombination; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; Early voltage; Ge profile; SiGe; SiGe HBT; analytical predictions; heterojunction bipolar transistors; model predictions; neutral-base recombination effect; Bipolar transistors; Current density; Electron emission; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Predictive models; Silicon germanium; Spontaneous emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642342

Filename

642342