Structural and photoelectric studies on double barrier quantum well infrared detectors

Author

Wu, W.G. ; Jiang, D.S. ; Cui, L.Q. ; Song, C.Y. ; Zhuang, Y.

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1997

fDate

35672

Firstpage

110

Lastpage

113

Abstract

GaAs-AlAs-GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3-5 μm photovoltaic infrared (IR) detectors with a peak detectivity of 5×10¹¹ cmHz^½/W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spectra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by the edge excitation method, providing information about the spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region

Keywords

III-V semiconductors; X-ray analysis; X-ray diffraction; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; 3 to 5 micron; 80 K; GaAs-AlAs-GaAlAs; IR photocurrent; MQW; double barrier quantum well structure; double crystal X-ray diffraction; edge excitation method; interband photovoltaic spectra; multiquantum wells; photogenerated carriers; photovoltaic infrared detectors; quantum well IR detectors; spectral response; synchrotron radiation X-ray analysis; Gallium arsenide; Infrared detectors; Photoconductivity; Photovoltaic systems; Radiation detectors; Solar power generation; Synchrotron radiation; X-ray detection; X-ray detectors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642344

Filename

642344