DocumentCode :
318720
Title :
Merged technology on MEMS
Author :
Lee, Mike Myung-Ok
Author_Institution :
Dept. of Inf. & Commun. Eng., Dongshin Univ., Chonnam, South Korea
fYear :
1997
fDate :
35672
Firstpage :
128
Lastpage :
135
Abstract :
This study presents briefly the review for stress analyses for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from SOI (Silicon On Insulator) structures. This paper mainly presents the trends on current smart sensor for future MEMS chip and also demonstrates a way of integrating with calibration, gain stage and microcontroller unit plus high current/high voltage CMOS drivers onto three chip module, two chip module and monolithic chip for future automobile, industrial and medical MEMS products
Keywords :
calibration; diaphragms; electric sensing devices; intelligent sensors; microsensors; piezoresistive devices; silicon-on-insulator; stress analysis; CMOS drivers; MEMS; MEMS chip; MEMS products; SOI structures; Si; calibration; gain stage; microcontroller unit; monolithic chip; output sensitivity; permissible diaphragm dimension; piezoresistive sensor theory; smart sensor; stress analyses; three chip module; two chip module; Automobiles; CMOS logic circuits; Calibration; Etching; Intelligent sensors; Mechanical sensors; Microcontrollers; Micromachining; Micromechanical devices; Piezoresistance; Residual stresses; Silicon; Silicon on insulator technology; Space technology; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
Type :
conf
DOI :
10.1109/HKEDM.1997.642349
Filename :
642349
Link To Document :
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