Title :
Tunable pulse generator for ultra-wideband applications
Author :
Jin, Renfeng ; Halder, Subrata ; Hwang, James C M ; Law, Choi L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
For the first time, an ultra-wideband pulse generator is fabricated in GaAs HBT IC technology. The generator includes delay and differential circuits to convert a TTL input into an impulse signal and a Class-C amplifier to increase the pulse amplitude while compressing the pulse width. By adjusting the bias of the Class-C amplifier, the pulse amplitude can be varied linearly between 3.5 V and 11.5 V while maintaining the pulse width at 0.3±0.1 ns. Alternatively, the pulse width can be varied linearly between 0.25 ns and 0.65 ns, while maintaining the pulse amplitude at 10±1 V. Finally, the amplified impulse signal can be shaped into a monocycle signal by an L-C derivative circuit. These results compare well with that of pulse generators fabricated in GaAs HEMT, Si CMOS or Si discrete technologies.
Keywords :
bipolar integrated circuits; circuit tuning; delay circuits; differential amplifiers; heterojunction bipolar transistors; pulse generators; ultra wideband technology; GaAs HBT IC technology; L-C derivative circuit; class-C amplifier; delay circuits; differential circuits; tunable pulse generator; ultrawideband applications; Gallium arsenide; Heterojunction bipolar transistors; Pulse amplifiers; Pulse circuits; Pulse compression methods; Pulse generation; Pulse shaping methods; Space vector pulse width modulation; Tunable circuits and devices; Ultra wideband technology; Heterojunctions; heterojunction bipolar transistors; pulse amplifiers; pulse analysis; pulse circuits; pulse measurement;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5385437