Title :
GaAs device activities in Europe
Author_Institution :
Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
This survey of European GaAs device activities focuses on GaAs MESFETs, HEMTs, and GaInAs JFETs. In all areas significant progress is noted and attributed to advanced processing methods. In the case of the GaInAs JFET, outstanding device results are cited. It is felt that the technology, however, is presently suited to very simple integrated circuits only and that of tools and processes similar to those for MESFETs are needed similar levels of integration to become feasible.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; high electron mobility transistors; junction gate field effect transistors; GaAs; GaInAs; HEMTs; JFETs; MESFETs; advanced processing methods; device activities; integrated circuits; Circuits; Europe; FETs; Gallium arsenide; MESFETs; Optoelectronic devices; Peak to average power ratio; Schottky barriers; Substrates; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22115
