DocumentCode
3187930
Title
GaAs device activities in Europe
Author
Baechtold, W.
Author_Institution
Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
1988
fDate
25-27 May 1988
Firstpage
641
Abstract
This survey of European GaAs device activities focuses on GaAs MESFETs, HEMTs, and GaInAs JFETs. In all areas significant progress is noted and attributed to advanced processing methods. In the case of the GaInAs JFET, outstanding device results are cited. It is felt that the technology, however, is presently suited to very simple integrated circuits only and that of tools and processes similar to those for MESFETs are needed similar levels of integration to become feasible.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; high electron mobility transistors; junction gate field effect transistors; GaAs; GaInAs; HEMTs; JFETs; MESFETs; advanced processing methods; device activities; integrated circuits; Circuits; Europe; FETs; Gallium arsenide; MESFETs; Optoelectronic devices; Peak to average power ratio; Schottky barriers; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22115
Filename
22115
Link To Document