A low-noise Ku-band AlGaAs/GaAs HBT oscillator

Author

Hayama, N. ; LeSage, S.R. ; Madihian, M. ; Honjo, K.

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1988

fDate

25-27 May 1988

Firstpage

679

Abstract

Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; microwave oscillators; solid-state microwave circuits; 15.5 GHz; AlGaAs-GaAs; FM noise; Ku-band; SSB; collector-current 1/f noise power density; free-running oscillator; heterojunction bipolar transistor; low-phase-noise; noise level; output power; Amplitude modulation; Current measurement; Density measurement; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Power generation; Power measurement; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22123

Filename

22123