Monolithic and discrete mm-wave InP lateral transferred-electron oscillators

Author

Binari, S.C. ; Neidert, R.E. ; Meissner, K.E.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

683

Abstract

A lateral InP transferred-electron device structure was investigated and its application to millimeter-wave monolithic integrated circuits (MMICs) was demonstrated. The discrete devices were tested in a tunable waveguide cavity. These tests showed a continuous-wave (CW) power output of 29.1 mW with a DC-to-RF conversion efficiency of 6.7% at 29.9 GHz. At W-band, CW power outputs of 0.9 mW and 0.4 mW were obtained at 75.2 GHz and 98.5 GHz, respectively. An 80-GHz monolithic oscillator incorporating the lateral transferred-electron devices is also described. Without external tuning, the circuit oscillated at 79.9 GHz with a pulsed power output of 0.1 mW.<>

Keywords

Gunn oscillators; III-V semiconductors; indium compounds; microwave integrated circuits; microwave oscillators; solid-state microwave devices; 0.4 mW; 0.9 mW; 29.1 mW; 29.9 GHz; 75.2 GHz; 80 GHz; 98.5 GHz; CW; DC-to-RF conversion efficiency; InP; W-band; lateral transferred-electron oscillators; millimeter-wave monolithic integrated circuits; power output; pulsed power output; tunable waveguide cavity; Anodes; Cathodes; Conductivity; Fabrication; Indium phosphide; Integrated circuit technology; Laboratories; Metallization; Monolithic integrated circuits; Oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22124

Filename

22124