Title :
V-band monolithic IMPATT VCO
Author :
Bayraktaroglu, B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Integration of a GaAs IMPATT oscillator and a varactor diode on a single chip is reported. The IMPATT oscillator was in the form of a half-wavelength microstrip resonator excited on both ends symmetrically by a pair of diodes. A third diode was placed close to one end of the resonator and used to control the oscillation frequency of the oscillator through a coupling capacitor. Depending on the value of the coupling capacitor, tuning ranges of up to 1.5 GHz could be obtained at a center frequency of 55 GHz. Typical output powers were in the 100 to 400 mW range.<>
Keywords :
III-V semiconductors; IMPATT diodes; microwave integrated circuits; microwave oscillators; variable-frequency oscillators; 100 to 400 mW; 55 GHz; GaAs; V-band; center frequency; coupling capacitor; half-wavelength microstrip resonator; monolithic IMPATT VCO; oscillation frequency; output powers; tuning ranges; varactor diode; Capacitors; Circuits; Diodes; Etching; Fabrication; Frequency; Gallium arsenide; Millimeter wave technology; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22125
