DocumentCode
3188123
Title
V-band monolithic IMPATT VCO
Author
Bayraktaroglu, B.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1988
fDate
25-27 May 1988
Firstpage
687
Abstract
Integration of a GaAs IMPATT oscillator and a varactor diode on a single chip is reported. The IMPATT oscillator was in the form of a half-wavelength microstrip resonator excited on both ends symmetrically by a pair of diodes. A third diode was placed close to one end of the resonator and used to control the oscillation frequency of the oscillator through a coupling capacitor. Depending on the value of the coupling capacitor, tuning ranges of up to 1.5 GHz could be obtained at a center frequency of 55 GHz. Typical output powers were in the 100 to 400 mW range.<>
Keywords
III-V semiconductors; IMPATT diodes; microwave integrated circuits; microwave oscillators; variable-frequency oscillators; 100 to 400 mW; 55 GHz; GaAs; V-band; center frequency; coupling capacitor; half-wavelength microstrip resonator; monolithic IMPATT VCO; oscillation frequency; output powers; tuning ranges; varactor diode; Capacitors; Circuits; Diodes; Etching; Fabrication; Frequency; Gallium arsenide; Millimeter wave technology; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22125
Filename
22125
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