Title :
Photo-induced refractive-index change of semiconductor
Author :
Saito, Mitsunori ; Matsumoto, Shin-ichi ; Nishikawa, Takashi
Author_Institution :
Dept. of Electron. & Informatics, Ryukoku Univ., Seta, Japan
Abstract :
The study aims to develop infrared devices by utilizing the photo-induced refractive-index change of semiconductor. When the semiconductor plate is exposed to a laser beam with sufficient photon energy, both the absorption coefficient and the refractive index change due to the plasma absorption by excited free carriers. This phenomenon can be used for switching, modulation, or wavelength selection of the infrared beam.
Keywords :
absorption coefficients; elemental semiconductors; germanium; infrared sources; photorefractive effect; photorefractive materials; refractive index; silicon; Ge; Si; absorption coefficient; excited free carriers; infrared devices; laser beam; photo-induced refractive-index change; plasma absorption; semiconductor plate; Electromagnetic wave absorption; Laser beams; Laser excitation; Laser transitions; Optical refraction; Particle beams; Plasma devices; Plasma waves; Refractive index; Semiconductor lasers;
Conference_Titel :
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN :
0-7803-7733-8
DOI :
10.1109/EQEC.2003.1314083
