• DocumentCode
    31882
  • Title

    High-Performance Pentacene Thin-Film Transistor With High- \\kappa HfLaON as Gate Dielectric

  • Author

    Chuan Yu Han ; Wing Man Tang ; Cheung Hoi Leung ; Chi Ming Che ; Lai, P.T.

  • Author_Institution
    Dept. of Electr. & Electron., Univ. of Hong Kong, Hong Kong, China
  • Volume
    34
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    1397
  • Lastpage
    1399
  • Abstract
    Pentacene organic thin-film transistor (OTFT) using high- k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as -0.53 V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/V·s, which is about twice that of its counterpart with HfLaO gate dielectric.
  • Keywords
    carrier mobility; hafnium compounds; high-k dielectric thin films; organic semiconductors; sputter deposition; thin film transistors; HfLaON; N2 flow rates; carrier mobility; high-k HfLaON gate dielectric; nitrogen content effects; pentacene organic thin-film transistor; reactive sputtering; threshold voltage; Dielectrics; Logic gates; Nitrogen; Organic thin film transistors; Pentacene; Fluorination; HfLaON; high- $kappa$ dielectric; organic thin-film transistor (OTFT);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2281661
  • Filename
    6615967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=31882