Title :
A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 mu m
Author :
Chorey, C.M. ; Ferendici, A. ; Bhasin, K.
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
Experimental GaAlAs modulators operating at 0.82 mu m using a Mach-Zehnder interferometer configuration were designed and fabricated. Coplanar 50- Omega traveling-wave microwave electrodes were used to obtain a bandwidth-length product of 11.95 GHz-cm. The design, fabrication, and DC performance of the modulator is presented.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; 0.82 micron; DC performance; GaAlAs; Mach-Zehnder interferometer configuration; bandwidth-length product; design; fabrication; traveling-wave microwave electrodes; travelling wave electro-optic modulator; Aluminum; Electrodes; Electrooptic modulators; Frequency; Gallium arsenide; Optical interferometry; Optical modulation; Optical scattering; Optical waveguides; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22136
