• DocumentCode
    3188425
  • Title

    CdS films prepared by the close-spaced sublimation and their influence on CdTe/CdS solar cell performance

  • Author

    Ferekides, C.S. ; Marinskiy, D. ; Marinskaya, S. ; Tetali, B. ; Oman, D. ; Morel, D.L.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    751
  • Lastpage
    756
  • Abstract
    Cadmium sulfide (CdS) films have been deposited on SnO2/7059 glass substrates by the close-spaced sublimation technique (CSS), and subsequently used for the fabrication of CdTe/CdS solar cells. The effect of various deposition parameters-ambient and temperature profiles-on film properties and solar cell performance has been investigated. One of the main objectives of this work has been to deposit device quality CdS films of small thickness in order to fabricate CdTe solar cells with enhanced blue response. Solar cells have been characterized using PL, I-V, I-V-T, SR, and C-V measurements. A photovoltaic conversion efficiency of 14.2% under AM1.5 conditions has been measured at the National Renewable Energy Laboratory
  • Keywords
    II-VI semiconductors; cadmium compounds; semiconductor growth; semiconductor thin films; solar cells; sublimation; vapour deposited coatings; 14.2 percent; AM1.5 conditions; CdS films; CdTe solar cells; CdTe-CdS; CdTe/CdS solar cell performance; National Renewable Energy Laboratory; SnO2; SnO2/7059 glass substrates; close-spaced sublimation; deposition parameters; device quality CdS films; enhanced blue response; fabrication; film properties; photovoltaic conversion efficiency; temperature profiles; Cadmium compounds; Capacitance-voltage characteristics; Cascading style sheets; Fabrication; Glass; Photovoltaic cells; Photovoltaic systems; Strontium; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564238
  • Filename
    564238