DocumentCode :
3188657
Title :
Probing the van der Waals atom-surface interaction in the non-zero temperature limit
Author :
Hamdi, I. ; Segundo, P.C. ; Dutier, G. ; Valente, P. ; Failache, H. ; Leite, J.R.R. ; Gorza, M.-P. ; Fichet, M. ; Bloch, D. ; Ducloy, M.
Author_Institution :
Laboratoire de Physique des Lasers, Univ. Paris 13, Villetaneuse, France
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
251
Abstract :
This reports on the surface attraction exerted onto Cs(8P), as measured through the selective reflection spectroscopy (SR) technique via a one- photon excitation at 388 nm from the ground state. In a series of experiments on the Cs (6S12/-8P32/) transition in front of a sapphire surface, the accuracy in the van der Waals evaluation, and with an improved fitting method, should be on the order of 10%. Further developments, expected to be reported too, concern the fine structure component Cs (6S12/-8P32/) , along with a study of SR spectroscopy at various interfaces.
Keywords :
atom-surface impact; fine structure; ground states; photoexcitation; radiative lifetimes; spectroscopy; van der Waals forces; 388 nm; 6S12/-8P32/ transition; Cs; fine structure component; fitting method; ground state; nonzero temperature limit; one-photon excitation; sapphire surface; selective reflection spectroscopy; van der Waals atom-surface interaction; Absorption; Atomic measurements; Density estimation robust algorithm; Dielectric measurements; Reflection; Spectroscopy; Strontium; Surface fitting; Temperature distribution; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2003. EQEC '03. European
Print_ISBN :
0-7803-7733-8
Type :
conf
DOI :
10.1109/EQEC.2003.1314108
Filename :
1314108
Link To Document :
بازگشت