Title :
A 5.25-GHz Low Noise Amplifier for WMAN Applications in a 0.18- μm CMOS Technology
Author :
Kalantari, F. ; Masoumi, N. ; Saeidi, R.
Author_Institution :
Department of Electrical Engineering, Tehran University, Tehran, Iran
Abstract :
A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE802.16a WMAN. The targeted frequency band is the un-licensed band U-Nll 5 GHz. The amplifier provides voltage gain of 16 dB with a noise figure of only 1.8 dB, the IIP3 is +2-dBm and the reverse isolation is about -15 dB. Using a 0.18μm CMOS process, the LNA dissipates 7.8 mW from a 1.8V supply voltage. In this paper, we present an analysis of the LNA architecture, including the effects of induced gate noise in MOS devices.
Keywords :
Amplifier noise; induced gate noise; low noise amplifier; noise figure; random noise; CMOS process; CMOS technology; FCC; Frequency; Gain; Impedance; Low-noise amplifiers; Matched filters; Noise figure; Voltage; Amplifier noise; induced gate noise; low noise amplifier; noise figure; random noise;
Conference_Titel :
Microelectronics, 2005. ICM 2005. The 17th International Conference on
Conference_Location :
Islamabad, Pakistan
Print_ISBN :
0-7803-9262-0
DOI :
10.1109/ICM.2005.1590051
